Siliciumkarbid: Forskelle mellem versioner
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<ref>[http://news.bbc.co.uk/2/hi/science/nature/3598836.stm 25 August, 2004, BBC News: Door open for silicon replacement] Citat: "...Previous research has already shown that even at red-hot temperatures as high as 650C (1,202F), silicon carbide devices can function unperturbed and without the need for cooling....One exciting application for silicon carbide could be in deep-space missions, where nuclear power would be needed for the craft. Radiation-hardened silicon carbide devices would reduce the shielding needed to protect reactor control electronics..." </ref>
<ref>[http://docs.lib.purdue.edu/dissertations/AAI3037643/ 2001, purdue.edu: Lateral power MOSFETs in silicon carbide] Citat: "...silicon carbide is considered to be the material of choice for power switching electronics in the future...we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV..."</ref>
<ref>[http://powerelectronics.com/power_semiconductors/sic/sic-super-junction-transistors-high-temp-performance-1111/ Oct 28, 2011, powerelectronics.com: SiC “Super” Junction Transistors Deliver High Temp Performance] Citat: "...GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions (< 15 ns)...The leakage current in the SJT at VDS = 1200 V is below 5 µA up to temperatures as high as 225 °C. Leakage currents of < 100 µA were measured even at 325 °C..."</ref>
==Kilder/referencer==
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